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High mobility -based -channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
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10.1063/1.2990645
/content/aip/journal/apl/93/13/10.1063/1.2990645
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2990645
/content/aip/journal/apl/93/13/10.1063/1.2990645
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/content/aip/journal/apl/93/13/10.1063/1.2990645
2008-09-29
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility HfO2-based In0.53Ga0.47Asn-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2990645
10.1063/1.2990645
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