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curves of MOSCAPs (a) with and (b) without a Ge IPL on -type layers at varying frequencies. and 60 s PDA were applied. (c) TEM and EELS analyses were carried out on the sample with a Ge IPL, , and 60 s PDA.
1 MHz (a) and (b) curves of MOSCAPs with a Ge IPL and as a function of PDA condition.
dc (a) and (b) characteristics of ring-type -channel MOSFETs with a Ge IPL, , 60 s PDA, and 10 s PMA.
(a) Calculated effective mobility and (b) split curves at varying frequencies as a function of gate bias from -channel MOSFETs with a Ge IPL, , 60 s PDA, and 10 s PMA.
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