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Low noise superconducting single photon detectors on silicon
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10.1063/1.2990646
/content/aip/journal/apl/93/13/10.1063/1.2990646
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2990646
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM picture of a NbTiN detector. The detector is and the wire is 100 nm wide and 6 nm thick. (b) Electrical model of the SSPD setup. The switch together with the normal resistance and the kinetic inductance model the detection principle of the SSPD.

Image of FIG. 2.
FIG. 2.

Quantum efficiency vs bias current for different wavelengths and temperatures, with an exponential fit through the data points. Cooling from 4.2 to 2.4 K exhibits an increase in quantum efficiency. In the inset a time trace of a detection event is shown.

Image of FIG. 3.
FIG. 3.

(a) Dark counts as a function of bias current and counter trigger level at a temperature of 4.2 K (yellow). A dark count trace for an identical NbN detector is shown for 60 mV counter trigger level (red). (b) Photon counts/s as a function of bias current and counter trigger level. The incident laser power is 0.01 nW with 650 nm wavelength.

Image of FIG. 4.
FIG. 4.

NEP for different trigger levels measured at 4.2 K.

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/content/aip/journal/apl/93/13/10.1063/1.2990646
2008-09-29
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low noise superconducting single photon detectors on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2990646
10.1063/1.2990646
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