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Nitrogen depth profile in S2 simulated using TRIM94 (black line with open circles). The red line shows the position of the 0.6% N concentration in the InSb crystal.
Measured sheet carrier concentrations of the three InSbN alloys fabricated by two-step ion implantation by Hall-effect technique. The data of the InSb wafer are for comparison.
XPS spectrum of S1 at a depth of 80 nm from the surface. The circles are the experimental data while the two green solid curves are the deconvolution of spectrum by peak fitting.
Calculated , , and N level in at 30 K as a function of N composition using the ten-band model.
Measured photocurrent spectra of S1, S2, and S3 with a house-made system at 30 K. The two green curves in (a) are for peak fitting.
Summary of bonding configuration of the implanted nitrogen in the three samples measured by XPS.
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