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InSbN alloys prepared by two-step ion implantation for infrared photodetection
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Image of FIG. 1.
FIG. 1.

Nitrogen depth profile in S2 simulated using TRIM94 (black line with open circles). The red line shows the position of the 0.6% N concentration in the InSb crystal.

Image of FIG. 2.
FIG. 2.

Measured sheet carrier concentrations of the three InSbN alloys fabricated by two-step ion implantation by Hall-effect technique. The data of the InSb wafer are for comparison.

Image of FIG. 3.
FIG. 3.

XPS spectrum of S1 at a depth of 80 nm from the surface. The circles are the experimental data while the two green solid curves are the deconvolution of spectrum by peak fitting.

Image of FIG. 4.
FIG. 4.

Calculated , , and N level in at 30 K as a function of N composition using the ten-band model.

Image of FIG. 5.
FIG. 5.

Measured photocurrent spectra of S1, S2, and S3 with a house-made system at 30 K. The two green curves in (a) are for peak fitting.


Generic image for table
Table I.

Summary of bonding configuration of the implanted nitrogen in the three samples measured by XPS.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InSbN alloys prepared by two-step ion implantation for infrared photodetection