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Fabrication and microstructure of -type transparent conducting CuS thin film and its application in dye-sensitized solar cell
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of films deposited at . (a) On unmodified glass for . (b) On silanized glass for . [(c)–(e)] On silanized glass for . (d) and (e) are cross-sectional images using secondary electron and backscattered electron, respectively.

Image of FIG. 2.
FIG. 2.

(a) Typical transmittance spectra (the inset), and the values at for various deposition times and temperatures. Film thickness is estimated by the spectra method. (b) Deposition-time dependency of sheet resistance and transparency. The inset is the reciprocal of sheet resistance vs deposition time.

Image of FIG. 3.
FIG. 3.

TEM images of the CuS film deposited at for . (a) Overall view of the film containing layer and islands. (b) ED pattern of the layer with a horizontally oriented grain and a vertically oriented grain, as schemed in the inset.

Image of FIG. 4.
FIG. 4.

Output performance of the -based DSSC, where the as-assembled films were deposited at for .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and microstructure of p-type transparent conducting CuS thin film and its application in dye-sensitized solar cell