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Energy band structure of the triple delta-doped (110) AlAs QW. The vertical axis denotes the energy scale, the Si-delta doping layers in the AlGaAs layers, the solid line shows the band, and the dashed line shows the band. The structure is the same as described in Ref. 4 on a different facet. (Inset) Electron occupation in a (110)-oriented QW, in momentum space. The -axis denotes the growth axis, and the single-valley case is shown as shaded ellipsoid (double-valley unshaded).
(Bottom) and traces at in the dark (dashed) and postillumination (solid) for sample J in van der Pauw configuration. In the dark, and and postillumination, and . (Top) Postillumination longitudinal resistance for sample L at low magnetic fields. Odd periodicity, of prominent minima, is one indication of single-valley occupancy. Ladder diagram inset shows Landau level splitting and Zeeman splitting for bare . The prominence of odd integer gaps suggests with interactions.
The density of 2DES in a (110)-oriented AlAs QW as a function of the Si -doping . The top -axis defines the time of Si doping corresponding to the doping densities. The vertical dashed line shows the saturation threshold for both the dark and the postillumination (red LED ∇) conditions. The solid lines are plotted as an aid to locating the saturation threshold.
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