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Achieving high Curie temperature in (Ga,Mn)As
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Curie temperature as a function of the distance from the center of the wafer for wafers 1 (black squares) and 2 (red crosses) annealed at for and wafer 3 (blue circles) annealed at for . (b) Temperature at the center of wafers 2 (red crosses), 3 (blue circles), and a wafer (black line) grown at a slightly higher temperature than wafer 1 measured by band edge spectrometry as a function of time during the growth of the (Ga,Mn)As layers. The start and end points of the growth of the (Ga,Mn)As layers are indicated by vertical lines. The arrows indicate the approximate point where the 2D-3D RHEED transition occurs.

Image of FIG. 2.
FIG. 2.

Curie temperature after annealing for , , , , , , and for a series of samples taken from wafer 2. Samples were taken from four different distances from the center of the wafer. Inset: for a sample taken from the center annealed at for then at for (1) , (2) , and (3) intervals, then at for (4).

Image of FIG. 3.
FIG. 3.

Curie temperature vs the spontaneous magnetization measured at for annealed samples showing the highest for a given . Open squares correspond to the samples with discussed in this paper while closed squares correspond to our previously reported results for (Ref. 2), which were grown on a different MBE system (Mod Gen II). For comparison, open circles correspond to samples grown on the Mod Gen III for showing that we can achieve similar results on either MBE system.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Achieving high Curie temperature in (Ga,Mn)As