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Structure and interface bonding of heterostructures
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Image of FIG. 1.
FIG. 1.

RHEED patterns recorded: after Ar sputtering at [(a) and (b)], after AH cleaning [(c) and (d)], after Ge deposition at RT (e), and (f), on an Ar sputtered surface and at RT (g) on an AH cleaned surface. The beam direction are reported in the panels. The dotted lines and the arrows point to the primary streaks and the reconstruction streaks, respectively.

Image of FIG. 2.
FIG. 2.

LEIS spectra of thick Ge films grown at RT on Ar-sputtered (a), at (b) on Ar-sputtered , and at RT on AH-cleaned (c). Inset: spectrum of a thick Ge/oxide reference sample. The spectra have been normalized to their maxima.

Image of FIG. 3.
FIG. 3.

XPS Ga and As lines (take-off angle of 90°) of the configurations using Ar sputtering (a) and AH cleaning (b) as surface preparations. Insets: Ge lines (left side), In lines (right side) after Ge oxidation for both surface preparations. The spectra have been normalized to their maxima.


Generic image for table
Table I.

The ratio and (between the oxide and the bulk semiconductor XPS components) in heterostructures (Ge grown at RT) are reported for two different surface preparations in order to give an indication of the amount of interfacial Ga–O and As–O bonds which correspond to the and species, respectively. The amount of surface In is estimated from the ratio between the elastic components of In and Ge in the LEIS spectra taken for thick structures.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure and interface bonding of GeO2∕Ge∕In0.15Ga0.85As heterostructures