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Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal
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10.1063/1.2993178
/content/aip/journal/apl/93/13/10.1063/1.2993178
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2993178
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Figures

Image of FIG. 1.
FIG. 1.

(a) AFM image of uncapped single-layer 2.6 ML InAs QD arrays on the seven period 2.1 ML InGaAsP SL template on InP (100) substrate with 0.6 ML GaAs interlayer beneath the QDs. [(b) and (c)] AFM images of uncapped twofold-stacked and threefold-stacked 2.6 ML InAs QD arrays with 0.12 ML increment in the GaAs interlayer thickness in successive layers. (d) AFM image of uncapped threefold-stacked 2.6 ML InAs QD arrays without increment in the GaAs interlayer thickness. The scan field is and the height contrast is 10 nm.

Image of FIG. 2.
FIG. 2.

Average height (squares) and diameter (circles) of the QDs within the arrays as a function of the number of stacked layers.

Image of FIG. 3.
FIG. 3.

PL spectra taken at RT of capped single-layer (solid line) and threefold-stacked (dashed line) 2.6 ML InAs QD arrays with 0.12 ML increment in the GaAs interlayer thickness in successive layers. Inset: PL spectrum of capped threefold-stacked 2.6 ML InAs QD arrays without increment in the GaAs interlayer thickness.

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/content/aip/journal/apl/93/13/10.1063/1.2993178
2008-09-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wavelength controlled multilayer-stacked linear InAs quantum dot arrays on InGaAsP/InP (100) by self-organized anisotropic strain engineering: A self-ordered quantum dot crystal
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2993178
10.1063/1.2993178
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