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zone-axis CBED (b) experimental and (d) simulated patterns of N-polar GaN (115 nm thick). The rotation between (a) the cross-sectional TEM image and (b) the CBED pattern introduced by different lens configuration has been confirmed by checking (c) the position of GaN film with respect to epoxy.
In situ reflectance of (a) Ga- and (b) N-polar GaN growths. Point in (a) and (b) corresponds to a short growth of 90 and 30 nm HT-GaN, respectively.
SEM surface images of (a) as-annealed Ga-polar LT-GaN buffer, (b) initial HT growth of Ga-polar GaN, (c) as-annealed N-polar LT-GaN buffer, and (d) initial HT growth of N-polar GaN. AFM images of (e) as-annealed N-polar LT-GaN buffer and (f) initial HT growth of N-polar GaN. Cross-sectional high-resolution TEM images of (g) as-annealed Ga-polar LT-GaN island and (h) initial HT growth of N-polar GaN.
RT PL spectra of Ga- and N-polar GaN. The inset shows the YL spectra range.
Characterization of nominally undoped Ga- and N-polar GaN.
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