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Mechanism of flatband voltage roll-off studied with film deposited on terraced oxide
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10.1063/1.2993335
/content/aip/journal/apl/93/13/10.1063/1.2993335
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2993335

Figures

Image of FIG. 1.
FIG. 1.

Flatband voltage-EOT relationship obtained from terraced oxide wafers deposited with 0–8 nm thick films.

Image of FIG. 2.
FIG. 2.

Ordinate intercepts plotted against EOT of . Ordinate intercepts are the extrapolated intersections with in Fig. 1.

Image of FIG. 3.
FIG. 3.

Comparison of FVRO behavior after shifting each group of data along the EOT axis to overlay each other. Inset shows the extracted roll-off starting point and corresponding minimum BIL thickness.

Image of FIG. 4.
FIG. 4.

The amount of FVRO as a function of EOT of . FVRO amount is independent of thickness.

Tables

Generic image for table
Table I.

Summary of major parameters calculated according to Eq. (1).

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/content/aip/journal/apl/93/13/10.1063/1.2993335
2008-10-01
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism of flatband voltage roll-off studied with Al2O3 film deposited on terraced oxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2993335
10.1063/1.2993335
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