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(a) Schematic geometry and (b) energy band structure of the InAs QD GaAs/AlAs double-barrier resonant tunneling diode.
Experimental characteristics of the QDRTD device measured at 77 K. The arrow indicates the increase in the presetup bias.
1D plane-wave simulation. (a) Curve 1: intrinsic characteristics of the QDRTD at 77 K. Curves 2 and 3 are obtained when the QD sheet density is increased by factors of 100 and 1000, respectively. (b) Conduction band edge profile of the RTD. The arrow indicates the increase in the external bias from to at a step of . (c) Net charge distribution (electron hole).
3D electron wave-packet transport. (a) Perfect QWR, and QWR with two AlAs barriers (RTD QWR). The inset shows the transmission probability predicted by the 1D plane-wave approximation. (b) QDRTD. Dotted lines: the QD is neutral; solid lines: the QD is charged with a positive charge (hole).
(a) Temporal development of the 3D electron wave-packet transport along the RTD QWR. (b) QDRTD QWR in which the QD is charged. .
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