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Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe
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10.1063/1.2995864
/content/aip/journal/apl/93/13/10.1063/1.2995864
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2995864
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Plan-view TEM image of the poly-Si gate, (b) grain size distribution estimated from the TEM image. The grain size is defined by the diameter of the circle whose area is the same as that of the grain. The abscissa is the ratio of summed area of grains in a size to the total area.

Image of FIG. 2.
FIG. 2.

3D elemental map of the MOSFET structure sample. As (yellow), P (red), B (white), O (blue), and Si (magenta). For visual clarity, only 5% of Si atoms are shown.

Image of FIG. 3.
FIG. 3.

(a) Enlarged view of the 3D elemental map around the gate oxide. As (yellow), P (red), B (white), and O (blue). (b) 1D concentration profile of the As (closed circle) and P (open triangle) atom across the gate oxide.

Image of FIG. 4.
FIG. 4.

(a) 3D elemental map of As (yellow) and P (red) in the poly-Si gate. (b) 1D concentration profile of the As (closed circle) and P (open triangle) atom across the grain boundary.

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/content/aip/journal/apl/93/13/10.1063/1.2995864
2008-10-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2995864
10.1063/1.2995864
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