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(a) Plan-view TEM image of the poly-Si gate, (b) grain size distribution estimated from the TEM image. The grain size is defined by the diameter of the circle whose area is the same as that of the grain. The abscissa is the ratio of summed area of grains in a size to the total area.
3D elemental map of the MOSFET structure sample. As (yellow), P (red), B (white), O (blue), and Si (magenta). For visual clarity, only 5% of Si atoms are shown.
(a) Enlarged view of the 3D elemental map around the gate oxide. As (yellow), P (red), B (white), and O (blue). (b) 1D concentration profile of the As (closed circle) and P (open triangle) atom across the gate oxide.
(a) 3D elemental map of As (yellow) and P (red) in the poly-Si gate. (b) 1D concentration profile of the As (closed circle) and P (open triangle) atom across the grain boundary.
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