1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a plasma
Rent:
Rent this article for
USD
10.1063/1.2995988
/content/aip/journal/apl/93/13/10.1063/1.2995988
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2995988
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Signal of the HFM without sample measured in an Ar plasma for different source powers vs time. (b) Energy flux density as a function of the plasma source power.

Image of FIG. 2.
FIG. 2.

Energy flux measured during the plasma interaction with a bulk silicon sample or with a silicon sample covered by a thermal layer ( thick). (a) Comparisons between the signal obtained when a silicon sample is submitted to the plasma (800 W, 20 SCCM, 3 Pa) and the signal obtained when an oxidized silicon sample is submitted to a plasma (800 W, 20 SCCM, 3 Pa) or an Ar plasma (800 W, 20 SCCM, 3 Pa). (b) Zoom of the results shown in (a) (lower part of the graph) for which a plasma or an Ar plasma interacts with a surface.

Image of FIG. 3.
FIG. 3.

(a) Time evolution of the HFM signal during an Ar plasma followed by a plasma in interaction with a silicon sample for different source powers vs time. Experimental conditions: 20 SCCM of (or Ar) . (b) Maximum energy flux density vs the source power density obtained for samples of silicon or oxidized silicon in interaction with plasma or Ar plasma.

Loading

Article metrics loading...

/content/aip/journal/apl/93/13/10.1063/1.2995988
2008-10-02
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2995988
10.1063/1.2995988
SEARCH_EXPAND_ITEM