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(a) Signal of the HFM without sample measured in an Ar plasma for different source powers vs time. (b) Energy flux density as a function of the plasma source power.
Energy flux measured during the plasma interaction with a bulk silicon sample or with a silicon sample covered by a thermal layer ( thick). (a) Comparisons between the signal obtained when a silicon sample is submitted to the plasma (800 W, 20 SCCM, 3 Pa) and the signal obtained when an oxidized silicon sample is submitted to a plasma (800 W, 20 SCCM, 3 Pa) or an Ar plasma (800 W, 20 SCCM, 3 Pa). (b) Zoom of the results shown in (a) (lower part of the graph) for which a plasma or an Ar plasma interacts with a surface.
(a) Time evolution of the HFM signal during an Ar plasma followed by a plasma in interaction with a silicon sample for different source powers vs time. Experimental conditions: 20 SCCM of (or Ar) . (b) Maximum energy flux density vs the source power density obtained for samples of silicon or oxidized silicon in interaction with plasma or Ar plasma.
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