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Raman spectra for the - and -plane AlN wafers taken at room temperature in the geometry. The dashed lines represent the positions of the different AlN Raman peaks.
SIMS depth profile of -plane and -plane AlN for oxygen, carbon, and silicon.
Optical transmission spectra and uncorrected absorption coefficient for the -plane and -plane grown AlN crystals recorded between 0.8 and 5.3 eV.
The square of the product of the absorption coefficient and the quantum energy as a function of the quantum energy for -plane and -plane AlN. The energy values represent the position of the intersection of the straight line with the abscissa.
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