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Different optical absorption edges in AlN bulk crystals grown in - and -orientations
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10.1063/1.2996413
/content/aip/journal/apl/93/13/10.1063/1.2996413
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2996413
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra for the - and -plane AlN wafers taken at room temperature in the geometry. The dashed lines represent the positions of the different AlN Raman peaks.

Image of FIG. 2.
FIG. 2.

SIMS depth profile of -plane and -plane AlN for oxygen, carbon, and silicon.

Image of FIG. 3.
FIG. 3.

Optical transmission spectra and uncorrected absorption coefficient for the -plane and -plane grown AlN crystals recorded between 0.8 and 5.3 eV.

Image of FIG. 4.
FIG. 4.

The square of the product of the absorption coefficient and the quantum energy as a function of the quantum energy for -plane and -plane AlN. The energy values represent the position of the intersection of the straight line with the abscissa.

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/content/aip/journal/apl/93/13/10.1063/1.2996413
2008-10-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Different optical absorption edges in AlN bulk crystals grown in m- and c-orientations
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/13/10.1063/1.2996413
10.1063/1.2996413
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