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Piezoelectric behavior of buffered lanthanum modified bismuth ferrite thin films grown by chemical method
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10.1063/1.2979692
/content/aip/journal/apl/93/14/10.1063/1.2979692
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2979692
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD of BLFO thin film deposited on SRO electrode and annealed at in static air for 2 h.

Image of FIG. 2.
FIG. 2.

XPS analysis of BLFO thin films deposited on SRO electrode and annealed at in static air for 2 h.

Image of FIG. 3.
FIG. 3.

(a) Remanent polarization-electric field hysteresis loops, (b) pulsed polarization as a function of an applied voltage, and (c) pulse width dependence of switched polarization in the range from to 1 ms. (d) Piezoelectric coefficient loop and (e) retention characteristics for BLFO thin film deposited on SRO electrode and annealed at in static air for 2 h.

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/content/aip/journal/apl/93/14/10.1063/1.2979692
2008-10-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Piezoelectric behavior of SrRuO3 buffered lanthanum modified bismuth ferrite thin films grown by chemical method
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2979692
10.1063/1.2979692
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