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(a) Optical image of the hybrid FET. (b) Gate-voltage dependent variation in the linear conductance (dc voltage ) of the device at 4.2 K and . (c) Hysteretic MR of the device for the three gate-voltage conditions identified in (b). Filled (open) symbols represent up (down) sweeps. Data sets have been offset by to account for the remnant magnetization of the superconducting magnet.
Contour plots showing the variation in the hysteretic component of the MR as a function of and . From top to bottom, respectively, the panels correspond to , and .
Main panel: as a function of zero-field linear conductance (dc voltage ). The straight line shows a logarithmic dependence of on . The inset plots as a function of . Filled circles: , ; open circles: , ; filled squares: , . Solid lines are guides for the eye.
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