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High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
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10.1063/1.2988894
/content/aip/journal/apl/93/14/10.1063/1.2988894
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2988894

Figures

Image of FIG. 1.
FIG. 1.

InGaN/GaN solar cell device structure (a) and contact grid layout (b).

Image of FIG. 2.
FIG. 2.

Reciprocal space map around the asymmetric (105) reflection of InGaN/GaN solar cell structure showing InGaN coherently strained to GaN.

Image of FIG. 3.
FIG. 3.

(004) reflection XRD scan of the solar cell structure with .

Image of FIG. 4.
FIG. 4.

External quantum efficiency vs wavelength for InGaN/GaN pin solar cells with top contact grid spacing of (solid circles) and (open circles).

Image of FIG. 5.
FIG. 5.

Typical and power density vs voltage characteristic for InGaN/GaN pin solar cell under concentrated AM0 illumination for (solid line) and (dashed line) contact grid spacing.

Tables

Generic image for table
Table I.

Measured solar cell parameters.

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/content/aip/journal/apl/93/14/10.1063/1.2988894
2008-10-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2988894
10.1063/1.2988894
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