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InGaN/GaN solar cell device structure (a) and contact grid layout (b).
Reciprocal space map around the asymmetric (105) reflection of InGaN/GaN solar cell structure showing InGaN coherently strained to GaN.
(004) reflection XRD scan of the solar cell structure with .
External quantum efficiency vs wavelength for InGaN/GaN pin solar cells with top contact grid spacing of (solid circles) and (open circles).
Typical and power density vs voltage characteristic for InGaN/GaN pin solar cell under concentrated AM0 illumination for (solid line) and (dashed line) contact grid spacing.
Measured solar cell parameters.
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