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Fabrication and electrical characterization of Si-based rolled-up microtubes
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View: Figures


Image of FIG. 1.
FIG. 1.

Ge and B distribution profiles measured by SIMS for a Si bilayer. The inset shows a schematic of the multilayered structure, including two junctions in antiserial connection.

Image of FIG. 2.
FIG. 2.

(a) Mask layout for defining the mesa pattern for a freestanding tube connected to two contact pads. (b) Schematic illustration of the freestanding tube structure obtained after the etching of the sacrificial layer. [(c) and (d)] SEM images of typical highly boron doped freestanding tubes with two terminals.

Image of FIG. 3.
FIG. 3.

characteristics measured for a bilayer between the two contacts before the etching of the sacrificial layer: (dash-double dotted line) and after it, for a freestanding tube: (solid line) and in the case that the bilayer is completely lifted off (dashed line). The inset is a magnification of the curve recorded after the removal of the tube from the substrate.

Image of FIG. 4.
FIG. 4.

Tube resistance vs bilayer thickness. The inset shows the curves measured for bilayers comprising and Si:B with varying thickness ratio.

Image of FIG. 5.
FIG. 5.

SEM images of rolled-up tubes obtained from (a) the as-grown bilayer, and from layers annealed at (b) and (c) . (d) Plot of vs the annealing temperature. No significant change is measured in the tube resistance for samples annealed at 600 and . A minimum is obtained for an annealing temperature of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and electrical characterization of Si-based rolled-up microtubes