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Ge and B distribution profiles measured by SIMS for a Si bilayer. The inset shows a schematic of the multilayered structure, including two junctions in antiserial connection.
(a) Mask layout for defining the mesa pattern for a freestanding tube connected to two contact pads. (b) Schematic illustration of the freestanding tube structure obtained after the etching of the sacrificial layer. [(c) and (d)] SEM images of typical highly boron doped freestanding tubes with two terminals.
characteristics measured for a bilayer between the two contacts before the etching of the sacrificial layer: (dash-double dotted line) and after it, for a freestanding tube: (solid line) and in the case that the bilayer is completely lifted off (dashed line). The inset is a magnification of the curve recorded after the removal of the tube from the substrate.
Tube resistance vs bilayer thickness. The inset shows the curves measured for bilayers comprising and Si:B with varying thickness ratio.
SEM images of rolled-up tubes obtained from (a) the as-grown bilayer, and from layers annealed at (b) and (c) . (d) Plot of vs the annealing temperature. No significant change is measured in the tube resistance for samples annealed at 600 and . A minimum is obtained for an annealing temperature of .
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