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(a) Surface potential map of the channel area obtained by KFM at (corresponding topography profile in the inset, -range ). (b) Measurement setup and structure of backgated SOI-FET device. (c) Surface potential dip induced by single donor atom. [(d)–(f)] The profiles of local potential fluctuation induced by individual phosphorus atoms measured by KFM.
(a) Surface potential map of the of the Si block obtained by simulation. (b) Schematic view of a simulated structure. (c) Local potential fluctuation profiles induced by individual dopant atoms or clusters. (d) The dependence between donor depth and corresponding surface potential.
SOI device channel surface potential with the dopant induced potential fluctuations taken for (a) , corresponding topography profile visible in the inset (-range ). (b) , (c) , (d) .
(a) Surface potential map obtained by KFM at , topography profile in the inset (-range ). (b) Measurement setup and structure of boron doped sample. (c) Local potential fluctuation profiles induced by individual boron atoms.
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