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(a) Schematic device representation. (b) AFM image of a device showing the nanotube crossing over the local gate electrode covered by a SAM. Scale bar .
(a) Silicon back-gate (open circles, and ) and local-gate (black dots, and ) transfer characteristics in air. (b) characteristic in both sweep directions. (c) Schematic band diagram for the situations (i) and (ii) of (b) corresponding to the conventional hole current in the on state and to the BTB tunneling current, respectively. The dashed areas correspond to the source and drain regions, the light gray areas to the sections of the nanotube controlled by the back-gate and the dark-gray area to the central section of the nanotube controlled by .
(a) Local gate transfer characteristics of a device measured under ambient conditions (open circles, and ) and in vacuum (black dots, and ). Inset: back-gate transfer characteristic in vacuum ( and ). (b) Schematic band diagram in air. (c) Same in vacuum.
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