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Estimates of the vertical diffusion length of P after at various RTA temperatures. The diffusion lengths due to TED (square) and chemical pumping (triangle) are extracted from works by Chang et al. (Ref. 13) and Solmi and Nobili (Ref. 14) for an ion-implanted density of . Estimates based on intrinsic P diffusivities (circle) in Si are extracted from data by Haddara et al. (Ref. 16). Data for -doping (star) is from Sullivan et al. (Ref. 10) for a density of . Dashed lines are guides.
Free carrier density , sheet resistance , mobility (or transport relaxation time ), and mean free path for Si:P -doped layers encapsulated at subjected to RTAs at 500, 600, and . Red solid line indicates the value for a sample without RTA. In (a), the expected doping level is also coincident with the red solid line. Dashed lines are guides.
Phase relaxation time , phase coherence length , and the ratio for Si:P -doped layers encapsulated at and subjected to RTAs at 500, 600, and . Red solid line indicates the value for a sample without RTA. Dashed lines are guides.
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