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Beryllium acceptor binding energy in AlN
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10.1063/1.2996977
/content/aip/journal/apl/93/14/10.1063/1.2996977
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2996977
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Low temperature PL spectra of undoped, Mg-doped, and Be-doped AlN epilayers measured in (a) a broad spectral range from and (b) a narrower spectral range from .

Image of FIG. 2.
FIG. 2.

Temperature dependence of the transition on Be-doped AlN epilayers measured from .

Image of FIG. 3.
FIG. 3.

Arrhenius plot of the PL intensity [ vs ] in Be-doped AlN epilayers in the temperature range from . We have excluded the PL intensity at because of the overlap of the peak position with 3LO phonon of excitation laser. The solid line represents the least squares fit of the data with Eq. (1).

Image of FIG. 4.
FIG. 4.

Temporal responses of the transition in (a) Mg- and (b) Be-doped AlN epilayers measured at . The measured decay lifetimes were 119 and for Mg- and Be-doped AlN epilayers, respectively.

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/content/aip/journal/apl/93/14/10.1063/1.2996977
2008-10-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Beryllium acceptor binding energy in AlN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2996977
10.1063/1.2996977
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