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Schematic of carrier diffusion and quantum capture in the QW and the conduction band energy diagram of the base region. The emitter is at the left side of the base and the collector is at the right side .
BW variation in the CB and CE configuration in the transistor laser. The bias current for both configurations is varied from to . A BW of 48 GHz is obtained for the CB configuration at , while the maximum BW of the CE configuration is 17 GHz.
Transfer function for the small-signal modulation of the transistor laser considering both the CE and CB configurations. The bias current for both configurations is varied from to .
Transfer function of the current ratios for the CE configuration (dashed curve) and CB configuration (solid lines). For each configuration two plots are shown: one for virtual state currents (blue curves) and the other for QW current (red curves). At high frequencies because of the carrier dynamics (carrier diffusion, capture, and escape) all transfer functions roll over. The device is biased at for both configurations.
Current gain of the transistor laser . A DC gain of 14.6dB and of 71 GHz are observed. The device is biased at .
Model parameter values used in the simulations.
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