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Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
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10.1063/1.2998612
/content/aip/journal/apl/93/14/10.1063/1.2998612
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2998612
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of bottom gate AZTO TFT structure.

Image of FIG. 2.
FIG. 2.

XRD spectra of (a) AZTO thin film deposited at room temperature and (b) annealed at .

Image of FIG. 3.
FIG. 3.

Transfer characteristics of AZTO TFT with the active layer deposited at room temperature ( characteristics of ZTO TFT are shown in the small box).

Image of FIG. 4.
FIG. 4.

Transfer characteristics of AZTO TFT without heat treatment, annealed at , and in vacuum for 1 h.

Image of FIG. 5.
FIG. 5.

Transfer characteristics of nonpassivated AZTO TFT annealed at in vacuum for 1 h and polyimide passivated AZTO TFT.

Image of FIG. 6.
FIG. 6.

The field effect mobility change with (a) content in AZTO active layer and (b) ratio of the sputtering chamber.

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/content/aip/journal/apl/93/14/10.1063/1.2998612
2008-10-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transparent Al–Zn–Sn–O thin film transistors prepared at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/14/10.1063/1.2998612
10.1063/1.2998612
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