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Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of the band profile of the magnetic double barrier structure. The exchange interaction of the magnetic ions is mediated by the carriers tunneling in and out of the well. (b) Equivalent circuit model of the resonant tunneling structure introducing the emitter and collector capacitances , and resistances , , respectively.

Image of FIG. 2.
FIG. 2.

(a) Contour plot of the well Curie temperature (K) as a function of the well level position and the applied bias. (b) Illustration of the different relative alignments of the quantum well level and the reservoirs chemical potentials and in the regions A–D, as indicated in the contour plot (a). The emitter and collector band edges are denoted by and , respectively.

Image of FIG. 3.
FIG. 3.

The (a) quantum well level position , (b) current , (c) Curie temperature , and (d) well splitting as a function of the applied bias. The solid lines indicate the voltage up-sweep values , whereas the dashed lines correspond to the voltage down-sweep values . In (a) the voltage curves are embedded in the contour plot of the well Curie temperature (K) and in (d) the solid red line corresponds to the actual well temperature .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetoelectric bistabilities in ferromagnetic resonant tunneling structures