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TR PL images recorded by the streak camera. The energy of the exciton recombination band is indicated in each figure. [(a)–(c)] Images taken for the QW at a temperature of , for different positions on the sample. [(d)–(f)] Images taken for the QW at a temperature of , for different positions on the sample. Excitation densities were for the sample with 5% Al content in the barriers and for the sample with 9% Al content in the barriers.
Reflectivity (full line) and PL (dashed line) spectra taken in the same point of the QW at . The exciton is clearly visible in both spectra at . The biexciton is only observable in PL.
Experimental TR PL spectra measured at short delays (squares) relative to Fig. 1. The full lines are the sum of the fitting Gaussian line shapes (dotted lines). (a) From low energy to high energy, spectra associated with Figs. 1(a)–1(c). (b) From low energy to high energy, spectra associated with Figs. 1(d)–1(f).
Biexciton binding energy as a function of (a) exciton emission energy and (b) the QW thickness for various points on the sample, for the two QWs with 5% Al content in the barriers (squares) and 9% Al content in the barriers (circles), respectively. Least square linear fits of the two sets of data in Fig. 4(b) are represented as a dashed line (5%) and a dash dotted line (9%), respectively. The biexciton binding energy of the GaN buffer layer is represented as a dotted line.
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