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Improved characteristics and issues of -plane InGaN films grown on low defect density -plane freestanding GaN substrates by metalorganic vapor phase epitaxy
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10.1063/1.2998580
/content/aip/journal/apl/93/15/10.1063/1.2998580
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.2998580
/content/aip/journal/apl/93/15/10.1063/1.2998580
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/content/aip/journal/apl/93/15/10.1063/1.2998580
2008-10-14
2014-12-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.2998580
10.1063/1.2998580
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