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RE excitation model in GaN. After a below band gap excitation, a carrier (here an electron) is trapped (1). A hole is then attracted by the electron, forming a bound exciton (2). The bound exciton transfers its energy to the RE ion (3) which then emits light. Two processes induced by an additional cw beam can dissociate the electron-hole pair: photoionization of the trap (4) or an Auger effect between the trapped carrier and free carrier (5).
(a) Er decay at under pulsed excitation at without (◼) and with (◻) an extra cw laser at (above bandgap excitation, ). (b) Er PL intensity at vs cw photon flux at .
Ratio between the Er decay amplitude at without and with an additional cw laser : (a) vs the square root of a cw photon flux at (above bandgap excitation) for a pulsed excitation (OPO) at 500 and ; (b) vs a cw photon flux at (below bandgap excitation) for a pulsed excitation (OPO) at .
Ratio between the Er lifetime without and with an above bandgap cw laser at vs the square root of the cw photon flux.
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