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Direct evidence of trap-mediated excitation in with a two-color experiment
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10.1063/1.2999585
/content/aip/journal/apl/93/15/10.1063/1.2999585
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.2999585
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RE excitation model in GaN. After a below band gap excitation, a carrier (here an electron) is trapped (1). A hole is then attracted by the electron, forming a bound exciton (2). The bound exciton transfers its energy to the RE ion (3) which then emits light. Two processes induced by an additional cw beam can dissociate the electron-hole pair: photoionization of the trap (4) or an Auger effect between the trapped carrier and free carrier (5).

Image of FIG. 2.
FIG. 2.

(a) Er decay at under pulsed excitation at without (◼) and with (◻) an extra cw laser at (above bandgap excitation, ). (b) Er PL intensity at vs cw photon flux at .

Image of FIG. 3.
FIG. 3.

Ratio between the Er decay amplitude at without and with an additional cw laser : (a) vs the square root of a cw photon flux at (above bandgap excitation) for a pulsed excitation (OPO) at 500 and ; (b) vs a cw photon flux at (below bandgap excitation) for a pulsed excitation (OPO) at .

Image of FIG. 4.
FIG. 4.

Ratio between the Er lifetime without and with an above bandgap cw laser at vs the square root of the cw photon flux.

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/content/aip/journal/apl/93/15/10.1063/1.2999585
2008-10-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct evidence of trap-mediated excitation in GaN:Er3+ with a two-color experiment
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.2999585
10.1063/1.2999585
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