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Direct evidence of trap-mediated excitation in with a two-color experiment
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10.1063/1.2999585
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Affiliations:
1 Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS-CEA-ENSICAEN, Université de Caen, 14050 Caen, France
a) Electronic mail: alain.braud@ensicaen.fr.
Appl. Phys. Lett. 93, 151107 (2008)
/content/aip/journal/apl/93/15/10.1063/1.2999585
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.2999585
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## Figures

FIG. 1.

RE excitation model in GaN. After a below band gap excitation, a carrier (here an electron) is trapped (1). A hole is then attracted by the electron, forming a bound exciton (2). The bound exciton transfers its energy to the RE ion (3) which then emits light. Two processes induced by an additional cw beam can dissociate the electron-hole pair: photoionization of the trap (4) or an Auger effect between the trapped carrier and free carrier (5).

FIG. 2.

(a) Er decay at under pulsed excitation at without (◼) and with (◻) an extra cw laser at (above bandgap excitation, ). (b) Er PL intensity at vs cw photon flux at .

FIG. 3.

Ratio between the Er decay amplitude at without and with an additional cw laser : (a) vs the square root of a cw photon flux at (above bandgap excitation) for a pulsed excitation (OPO) at 500 and ; (b) vs a cw photon flux at (below bandgap excitation) for a pulsed excitation (OPO) at .

FIG. 4.

Ratio between the Er lifetime without and with an above bandgap cw laser at vs the square root of the cw photon flux.

/content/aip/journal/apl/93/15/10.1063/1.2999585
2008-10-14
2014-04-25

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