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Distribution of point defects in orientation-patterned GaAs crystals: A cathodoluminescence study
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Image of FIG. 1.
FIG. 1.

[(a) and (b)] Schematics of the two wafers used for bonding with their respective orientations. (c) Near infrared transmission of a typical unpatterned template after wafer-bonding step. (d) Photolithographic process on InGaP layer after mechanochemical removal of top substrate. (e) Multigrating OP-GaAs final template. (f) Top view of final template.

Image of FIG. 2.
FIG. 2.

Cross sections of thick GaAs film grown on period OP-GaAs templates (sample A on the left; sample B on the right).

Image of FIG. 3.
FIG. 3.

Panchromatic CL image of a cleaved (110) face of an OP-GaAs crystal showing the luminescence contrast between the two domain orientations.

Image of FIG. 4.
FIG. 4.

Typical CL spectra obtained (A1) on the domains of sample A, (A2) on the domain wall of sample A, and (B) on the domains of sample B.

Image of FIG. 5.
FIG. 5.

Monochromatic image of sample A. Superposed are the profiles across the horizontal scanning line of the intensity of the band and the relative intensity of the defect related band peaking at with respect to the excitonic band at .


Generic image for table
Table I.

Optical losses and free carrier concentration in samples A and B shown in Fig. 2.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Distribution of point defects in orientation-patterned GaAs crystals: A cathodoluminescence study