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Laser drilling induced electrical type inversion in vacancy-doped -type HgCdTe
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Optical image of laser drilling-induced holes and (b) the relationship between the hole sizes and laser drilling power. Each hole in the image was generated with a different combination of laser intensity and pulse number, as designated. The plot in (b) indicates a roughly linear relationship between the laser power and the holes diameter.

Image of FIG. 2.
FIG. 2.

AFM characterization on the laser drilling induced holes in -HgCdTe. (a) AFM images of two holes generated with laser intensities of 80 and 50 mW. (b) Topography line profiles across the centers of the holes. The inner diameter and the extension of the overall structure of each hole are designated by the arrows.

Image of FIG. 3.
FIG. 3.

LBIC characterization on holes arrays of HgCdTe. (a) Schematic illustration on the principle of LBIC measurements in which a line profile of light-induced current vs scanning position of the excitation spot across a junction region is recorded. (b) LBIC linescan across a row of ion-milling formed holes in -type HgCdTe monolith, which has a pitch of . (c) LBIC linescan across five laser drilling induced holes, which are equally spaced by and were generated with different laser intensity as designated. The LBIC for each hole is a pair of positive/negative peak structures whose distance indicates the dimension of type-inversion of the hole. The nonzero current range of a diode indicates the dimension of photosensitive area, which is for the 100 mW hole. A drastic drop in signal intensity (about 20 times smaller) is shown by the 15 mW hole.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser drilling induced electrical type inversion in vacancy-doped p-type HgCdTe