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Bright-field TEM cross-section micrograph of a representative SRN/Si-SLs fabricated by direct cosputtering. Inset: high-resolution TEM cross section of a portion of the same SRN/Si-SLs showing Si-nc (indicated by arrows).
(a) PL spectra of SRN/Si-SLs with different atomic percent Si. Inset shows integrated PL intensities of SRN/Si-SLs samples for stoichiometry varied from 46% to 56% atomic Si. (b) Experimental characteristic (open circles) of the sample with 53% atomic Si. Data were fitted by for SCLC (solid), for direct tunneling (dot), for Fowler–Nordheim tunneling (dash), for Frenkel–Poole emission (dash dot), and for Ohmic (dash dot dot), where and are the fitting parameters. The bottom right inset shows the variation in the parameter with the silicon concentration. The schematic of the electrical device structures is shown in the upper inset.
(a) EL spectra at varied voltages. Inset shows linear relation between integrated EL intensity and current density with a turn-on voltage of 6 V. (b) EL spectra of SRN/Si-SLs with different atomic percent Si measured at 10 V. The inset shows the integrated EL intensities of SRN/Si-SLs samples with stoichiometry varying from 46% to 56% atomic Si.
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