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Comment on “Use of pre-ion-implantation on Si substrate to enhance the strain relaxation of the metamorphic buffer layer for the growth of Ge layer on Si substrate” [Appl. Phys. Lett.90, 083507 (2007)]
1.Y. C. Hsieh, E. Y. Chang, G. L. Luo, M. H. Pilkuhn, S. S. Tang, C. Y. Chang, J. Y. Yang, and H. W. Chung, Appl. Phys. Lett. 90, 083507 (2007).
2.Z. W. Zhou, Z. M. Cai, Y. Zhang, K. H. Cai, B. Zhou, G. J. Lin, J. Y. Wang, C. Li, H. K. Lai, S. Y. Chen, J. Z. Yu, and Q. M. Wang, Chin. J. Semicond. 29, 315 (2008) (in chinese).
3.D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, Appl. Phys. Lett. 84, 906 (2003).
5.T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, Appl. Phys. Lett. 90, 092108 (2007).
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In a recent letter, Hsieh et al. reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only , a surface root-mean-square roughness of less than , and a threading dislocation of on pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors.
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