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Comment on “Use of pre-ion-implantation on Si substrate to enhance the strain relaxation of the metamorphic buffer layer for the growth of Ge layer on Si substrate” [Appl. Phys. Lett.90, 083507 (2007)]
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/content/aip/journal/apl/93/15/10.1063/1.3003873
2008-10-17
2015-08-05

Abstract

In a recent letter, Hsieh et al. reported the growth of high-quality Ge epilayers with a SiGe buffer thickness of only , a surface root-mean-square roughness of less than , and a threading dislocation of on pre-ion-implantation Si substrate utilizing of strain relaxation enhancement by point defects and interface blocking of the dislocations. Our comment has focused on x-ray diffraction data shown in Fig. 3 of Ref. 1. We demonstrate that the strain in Ge epilayers is tensile, rather than compressive as misunderstood by the authors.

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Scitation: Comment on “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate” [Appl. Phys. Lett.90, 083507 (2007)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/15/10.1063/1.3003873
10.1063/1.3003873
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