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The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter
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View: Figures


Image of FIG. 1.
FIG. 1.

Structure of the microplasma transistor: (a) cross-sectional diagram and electrical connections for the entire device and (b) detailed cross section of a MOS electron emitter. The thickness of the film in the emission (central) region is 5–15 nm.

Image of FIG. 2.
FIG. 2.

Top: total current and voltage wave forms for a single microplasma/electron emitter assembly recorded for and increased from 0 to 20 V in 5 V increments. Bottom panel: conduction current wave forms.

Image of FIG. 3.
FIG. 3.

Comparison of the rms conduction currents observed with, and in the absence of, auxiliary electrons injected into the microplasma. For the electron injection measurements (illustrated by the open circles), was maintained at 300 V and varied from 0 to . Disabling the electron emitter and varying over the 300–320 V interval yielded the data represented by the solid circles (●).

Image of FIG. 4.
FIG. 4.

Visible radiation intensity wave forms recorded with and without electron emission. (Top) Intensity profiles observed for and increased by 20 V in 5 V increments. (Bottom) Series of wave forms obtained for fixed at 280 V and increased from 0 to 20 V.

Image of FIG. 5.
FIG. 5.

Data similar to those of Fig. 3 but comparing the relative rms (time-integrated) visible emission intensities observed when is fixed at 300 V (○) or and (●).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The plasma transistor: A microcavity plasma device coupled with a low voltage, controllable electron emitter