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Anisotropic in-plane strains in nonpolar AlN and AlGaN films grown on SiC substrates
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10.1063/1.2995994
/content/aip/journal/apl/93/16/10.1063/1.2995994
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.2995994
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic drawing for the explanations of strains ( , , and ) and stresses ( and ) in AlN and AlGaN films.

Image of FIG. 2.
FIG. 2.

Strains (closed circles), (closed squares), and (closed triangles) in AlN and AlGaN films plotted as functions of Ga composition. The lower and upper solid lines are and values calculated assuming the pseudomorphic growth on substrates.

Image of FIG. 3.
FIG. 3.

Residual stresses (closed circles) and (closed triangles) in AlN and AlGaN films plotted as functions of Ga composition.

Image of FIG. 4.
FIG. 4.

XRC FWHM values of the symmetric reflection of AlN and AlGaN films plotted as a function of Ga composition. Two types of the x-ray incident planes were used, which are planes parallel to the and directions. The tilt angles obtained in the respective directions are called tilt -direction (closed circles) and tilt -direction (open circles).

Image of FIG. 5.
FIG. 5.

Low-magnification cross-sectional TEM image of film. In order to obtain strong contrast for BSFs, the zone axis was set to by rotating by around the -axis, and a bright field image was recorded under two beam conditions with -vector .

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/content/aip/journal/apl/93/16/10.1063/1.2995994
2008-10-22
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anisotropic in-plane strains in nonpolar AlN and AlGaN (112¯0) films grown on SiC (112¯0) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.2995994
10.1063/1.2995994
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