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Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors
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10.1063/1.2999590
/content/aip/journal/apl/93/16/10.1063/1.2999590
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.2999590
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Transfer characteristics: black (◼): , red (•): , green (▲): . Inset: the cross section of the device under test. (b) Current-voltage characteristics of the device at various values.

Image of FIG. 2.
FIG. 2.

(a) Total resistance as a function of channel length for different values. Inset: contact resistance as a function of ( and ranges from ) (b) Non-ohmic contact resistance as a function of for different values.

Image of FIG. 3.
FIG. 3.

Field-effect mobility as a function of gate overdrive voltage before (•) and after (◼) contact resistance removal.

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/content/aip/journal/apl/93/16/10.1063/1.2999590
2008-10-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.2999590
10.1063/1.2999590
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