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Thin-film passivation by atomic layer deposition for organic field-effect transistors
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/content/aip/journal/apl/93/16/10.1063/1.3000017
1.
1.D. Knipp, T. Muck, A. Benor, and V. Wagner, J. Non-Cryst. Solids 352, 1774 (2006).
http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.145
2.
2.R. Ye, M. Baba, K. Suzuki, Y. Ohishi, and K. Mori, Thin Solid Films 464, 437 (2004).
http://dx.doi.org/10.1016/j.tsf.2004.06.030
3.
3.O. D. Jurchescu, J. Baas, and T. T. M. Palstra, Appl. Phys. Lett. 87, 052102 (2005).
http://dx.doi.org/10.1063/1.2001130
4.
4.O. D. Jurchescu, J. Baas, and T. T. M. Palstra, Appl. Phys. Lett. 84, 3061 (2004).
http://dx.doi.org/10.1063/1.1704874
5.
5.Y. Qiu, Y. Hu, G. Dong, L. Wang, J. Xie, and Y. Ma, Appl. Phys. Lett. 83, 1644 (2003).
http://dx.doi.org/10.1063/1.1604193
6.
6.Z. T. Zhu, J. T. Mason, R. Dieckmann, and G. G. Malliaras, Appl. Phys. Lett. 81, 4643 (2002).
http://dx.doi.org/10.1063/1.1527233
7.
7.C. Goldmann, D. J. Gundlach, and B. Batlogg, Appl. Phys. Lett. 88, 063501 (2006).
http://dx.doi.org/10.1063/1.2171479
8.
8.D. Li, E. Borknet, R. Nortrup, H. Moon, H. Katz, and Z. Bao, Appl. Phys. Lett. 86, 042105 (2005).
http://dx.doi.org/10.1063/1.1852708
9.
9.S. H. Han, J. H. Kim, J. Jang, S. M. Cho, M. H. Oh, S. H. Lee, and D. J. Choo, Appl. Phys. Lett. 88, 073519 (2006).
http://dx.doi.org/10.1063/1.2174876
10.
10.S.-H. K. Park, J. Oh, C. Hwang, J. Lee, Y. S. Yang, and H. Y. Chu, Electrochem. Solid-State Lett. 8, H21 (2005).
http://dx.doi.org/10.1149/1.1850396
11.
11.S. Ferrari, F. Perissinotti, E. Peron, L. Fumagalli, D. Natali, and M. Sampietro, Org. Electron. 8, 407 (2007).
http://dx.doi.org/10.1016/j.orgel.2007.02.004
12.
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FIG. 1.

(a) Variations in the mobility after passivation at deposition temperatures of 80, 90, and , (b) Transfer curves before/after passivation at . The inset shows the schematic structure of an -passivated pentacene FET.

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FIG. 2.

Time dependence of the electrical characteristics of pentacene FETs in air : (a) Capacitance, (b) relative on-current, (c) relative mobility, (d) threshold-voltage shift, (e) transfer characteristics of unpassivated devices, and (f) transfer characteristics of an (-thick) passivated device in air.

Image of FIG. 3.

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FIG. 3.

Temperature-dependent mobility and activation energy of pentacene FETs: (a) unpassivated devices exposed to air for 0 and , (b) unpassivated devices exposed to oxygen for 0, 6, and , and (c) unpassivated devices exposed to humidity for (at , 20%, 35%, and 70%).

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/content/aip/journal/apl/93/16/10.1063/1.3000017
2008-10-21
2014-04-17

Abstract

The thin-film passivation of organic field-effect transistors(OFETs) using films grown by atomic layer deposition was investigated. A high-quality passivation layer was deposited on OFETs at using trimethylaluminum and water. Despite the low deposition temperature, the -thick passivation layers exhibited a low water-vapor-transmission-rate value of . In addition, the mobility of the -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after as a result of the excellent barrier properties of the passivation layer.

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Scitation: Thin-film passivation by atomic layer deposition for organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3000017
10.1063/1.3000017
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