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Thin-film passivation by atomic layer deposition for organic field-effect transistors
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/content/aip/journal/apl/93/16/10.1063/1.3000017
2008-10-21
2014-08-02

Abstract

The thin-film passivation of organic field-effect transistors(OFETs) using films grown by atomic layer deposition was investigated. A high-quality passivation layer was deposited on OFETs at using trimethylaluminum and water. Despite the low deposition temperature, the -thick passivation layers exhibited a low water-vapor-transmission-rate value of . In addition, the mobility of the -passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after as a result of the excellent barrier properties of the passivation layer.

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Scitation: Thin-film passivation by atomic layer deposition for organic field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3000017
10.1063/1.3000017
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