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SEM cross-section image of SQW structure, wet etched and nonselectively oxidized at with 7000 ppm participation for 30 min, showing 116 nm oxide growth in active region. The inset conduction band schematic highlights the epitaxial structure.
Native oxide thickness at (a) InGaAs active region, (b) , and (c) AlGaAs/GaAs interface vs oxidation time with exponential fit. Inset: SEM cross-sectional image of a wet-etched stripe oxidized 55 min at with 7000 ppm , with oxidation front highlighted by dashed line.
Pulsed vs effective laser aperture width for HIC RWG lasers with Left inset: Total (2-facet) output power vs current of devices with [pulsed (“pls”) and fast dc] and (pulsed). Right inset: Logarithmic scale single longitudinal mode spectrum of laser at CW.
Internal loss and injection efficiency vs laser aperture width .
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