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Native-oxide-confined high-index-contrast strain-compensated InGaAs single quantum well ridge waveguide lasers
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10.1063/1.3001587
/content/aip/journal/apl/93/16/10.1063/1.3001587
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3001587
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM cross-section image of SQW structure, wet etched and nonselectively oxidized at with 7000 ppm participation for 30 min, showing 116 nm oxide growth in active region. The inset conduction band schematic highlights the epitaxial structure.

Image of FIG. 2.
FIG. 2.

Native oxide thickness at (a) InGaAs active region, (b) , and (c) AlGaAs/GaAs interface vs oxidation time with exponential fit. Inset: SEM cross-sectional image of a wet-etched stripe oxidized 55 min at with 7000 ppm , with oxidation front highlighted by dashed line.

Image of FIG. 3.
FIG. 3.

Pulsed vs effective laser aperture width for HIC RWG lasers with Left inset: Total (2-facet) output power vs current of devices with [pulsed (“pls”) and fast dc] and (pulsed). Right inset: Logarithmic scale single longitudinal mode spectrum of laser at CW.

Image of FIG. 4.
FIG. 4.

Internal loss and injection efficiency vs laser aperture width .

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/content/aip/journal/apl/93/16/10.1063/1.3001587
2008-10-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Native-oxide-confined high-index-contrast λ=1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3001587
10.1063/1.3001587
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