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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
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10.1063/1.3002300
/content/aip/journal/apl/93/16/10.1063/1.3002300
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3002300
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Figures

Image of FIG. 1.
FIG. 1.

PL and PLE spectra measured at 10 K for samples A, B, and G, respectively. The PLE detection energies of samples A, B, and C were 3.203, 3.128, and 3.283 eV, respectively.

Image of FIG. 2.
FIG. 2.

PL spectra of UTIR InGaN/GaN MQWs measured by using (a) a He–Cd laser and (b) a Nd:YAG laser. The excitation power density was varied from and . The inset shows the surface emission geometry.

Image of FIG. 3.
FIG. 3.

Spontaneous and SE spectra at RT with the edge emission geometry of (a) sample A, (b) sample B, and (c) sample G, respectively. The inset shows the edge emission geometry.

Image of FIG. 4.
FIG. 4.

Integrated luminescence intensity as a function of the excitation power density for all samples at RT.

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/content/aip/journal/apl/93/16/10.1063/1.3002300
2008-10-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3002300
10.1063/1.3002300
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