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The schematic for the electrode on the measurement of the LSMO/SNTO heterojunction. In this figure, the electrode on the surface of LSMO is large enough to cover the clusters of ferromagnetic and paramagnetic phases, so that the current is parallel through various regions of the LSMO film.
The energy band structure and the schematic density of states of the LSMO/SNTO junction at the bias.
The positive MR dependence on spin polarization for paramagnetic phase at temperatures of 100, 150, 200, and , respectively in LSMO/SNTO junction. The inset shows the resistance of the paramagnetic phase dependence on spin polarization.
Simulated process of cluster percolation from low temperature ferromagnetic phase (black) to high temperature paramagnetic phase (white) phase transition in the mixed-phase description on a matrix at temperatures of 100 (a), 150 (b), 200 (c), and (d), respectively. The arrows indicate the warming process from .
(a) The experimental MR dependence on magnetic field at the temperature range from in LSMO/SNTO junction. (b) The calculated MR dependence on magnetic field at the temperature range from in LSMO/SNTO junction. (c) The calculated magnetoresistance as a function of temperature with the magnetic fields of 0.1, 1, 3, and , respectively.
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