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Schematic of the -structure. The inserted AlSb layer forms a barrier for electrons in the conduction band and a double quantum well for holes in the valence band.
Energy distribution of the realizable SL designs: (a) type II conduction band; (b) -structure conduction band; (c) type II valence band; and (d) -structure valence band. The wider band spread is observed in -structure.
Band line up of the three designs in a heterodiode: In design 1, -region has higher conduction band than the -region, resulting in blocking barrier as depicted in the inset (a), while in designs 2 and 3, the band discontinuity between -region and -region is negative, there is no blocking barrier as shown in the inset (b).
Optical spectra of samples with -structure barrier compared to the reference sample. Solid lines are for measurements at bias voltage and the dashed line is the quantum efficiency measurement of design 2 at reverse bias.
Energy levels of three -structure designs.
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