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Band edge tunability of -structure for heterojunction design in Sb based type II superlattice photodiodes
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10.1063/1.3005196
/content/aip/journal/apl/93/16/10.1063/1.3005196
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3005196

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the -structure. The inserted AlSb layer forms a barrier for electrons in the conduction band and a double quantum well for holes in the valence band.

Image of FIG. 2.
FIG. 2.

Energy distribution of the realizable SL designs: (a) type II conduction band; (b) -structure conduction band; (c) type II valence band; and (d) -structure valence band. The wider band spread is observed in -structure.

Image of FIG. 3.
FIG. 3.

Band line up of the three designs in a heterodiode: In design 1, -region has higher conduction band than the -region, resulting in blocking barrier as depicted in the inset (a), while in designs 2 and 3, the band discontinuity between -region and -region is negative, there is no blocking barrier as shown in the inset (b).

Image of FIG. 4.
FIG. 4.

Optical spectra of samples with -structure barrier compared to the reference sample. Solid lines are for measurements at bias voltage and the dashed line is the quantum efficiency measurement of design 2 at reverse bias.

Tables

Generic image for table
Table I.

Energy levels of three -structure designs.

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/content/aip/journal/apl/93/16/10.1063/1.3005196
2008-10-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3005196
10.1063/1.3005196
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