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Ge dangling bonds at the interface and the viscoelastic properties of
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Atomic configuration of the relaxed slab model. In (b), a bridging oxygen atom is removed at the interface, producing two Ge dangling bonds, which are subsequently bonded to two hydrogen atoms.

Image of FIG. 2.
FIG. 2.

Calculated energy band structure of the slab model shown in Fig. 1(b) (solid lines). The dotted line corresponds to the energy level of a center (Ge dangling bond) at the interface. The dashed lines indicate the Ge energy band gap.

Image of FIG. 3.
FIG. 3.

Normalized averaged stress in the layer [open squares (Ref. 12)] and normalized density of centers at interfaces [full circles (Ref. 11)] as a function of the growth temperature for an oxidation time fixed at 120 min. The dashed and solid lines are fits to the normalized average stress data using Eqs. (1) and (3), respectively. Inset: viscosity of and as a function of inverse of temperature. Dashed lines are fits to the data using Eq. (2).

Image of FIG. 4.
FIG. 4.

Simulated density of Ge dangling bonds as a function of the growth temperature for different oxidation times.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2