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Origin of tensile stress in the Si substrate induced by metal gate/high- dielectric gate stack
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10.1063/1.3009572
/content/aip/journal/apl/93/16/10.1063/1.3009572
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3009572
/content/aip/journal/apl/93/16/10.1063/1.3009572
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/content/aip/journal/apl/93/16/10.1063/1.3009572
2008-10-24
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of tensile stress in the Si substrate induced by TiN∕HfO2 metal gate/high-k dielectric gate stack
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/16/10.1063/1.3009572
10.1063/1.3009572
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