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Intermixing and chemical structure at the interface between and V-based contacts
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View: Figures


Image of FIG. 1.
FIG. 1.

Bare and RTA-treated thin and thick contacts on : (a) Ga XPS spectra (dots) with respective fits (solid) and residuals, (b) Ga XAES spectra [for the thin RTA contact sample the experimental data (dots) and a smoothed (solid red) line are shown], (c) O XPS spectra, and (d) the corresponding modified Ga Auger parameters. In (d), hatched areas denote previously published values of Ga, GaN, and (Ref. 15).

Image of FIG. 2.
FIG. 2.

(a) XES N and (b) V spectra of , thick contact sample before (“untreated”) and after RTA, and VN powder as well as a V metal reference. The XES V spectrum labeled “diff.” is the difference between the “RTA” spectrum and the untreated spectrum (the latter multiplied by 0.6). For all spectra, multiplication factors are given that normalize the maximum count rate of all spectra to the same value. For the untreated sample, the experimental data (dots) and a smoothed (solid red) line are shown. The inset in (a) shows the magnified region of the Ga transition for the RTA-treated and samples.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intermixing and chemical structure at the interface between n-GaN and V-based contacts