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Reproducible growth of -type ZnO:N using a modified atomic layer deposition process combined with dark annealing
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10.1063/1.3000604
/content/aip/journal/apl/93/17/10.1063/1.3000604
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3000604
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Treatments (heat and light) undertaken on as-deposited films.

Image of FIG. 2.
FIG. 2.

X-ray diffractograms (a) and Raman spectra (b) of films deposited over a range of temperatures.

Image of FIG. 3.
FIG. 3.

(a) Effect of film deposition temperature on grain size, roughness, and film thickness. Parts (b) and (c) are illustrative atomic force micrographs of films deposited at 100 and .

Image of FIG. 4.
FIG. 4.

Electrical properties of ZnO:N films deposited at different temperatures. Mobility and carrier concentration vs deposition temperature after treatment 2 (a), and resistivity vs deposition temperature comparing samples after treatments 2 and 3. The lines are guides for the eye.

Image of FIG. 5.
FIG. 5.

Photoconductivity normalized to the net gain in conductivity vs time in the dark at room temperature. The gradients noted in the legend were determined from a linear fit on the log-log plot for the last decade of time data.

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/content/aip/journal/apl/93/17/10.1063/1.3000604
2008-10-31
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3000604
10.1063/1.3000604
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