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Molecular beam epitaxy and structural anisotropy of -plane InN grown on free-standing GaN
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10.1063/1.3001806
/content/aip/journal/apl/93/17/10.1063/1.3001806
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3001806
/content/aip/journal/apl/93/17/10.1063/1.3001806
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/content/aip/journal/apl/93/17/10.1063/1.3001806
2008-10-27
2014-07-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3001806
10.1063/1.3001806
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