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Scheme of the analyzed doubly clamped beam resonators that vary in length , undercut length , and width . The layer thicknesses are given in brackets. The drive, sense, and ground contact areas are provided for electrical excitation and detection. The direction of the excited out-of-plane deflection is indicated by the bold arrows.
(a) Optical microscope image showing part of a processed chip. The beam resonators in the right column vary in length from 275 to . (b) Scanning electron microscope image of one of the shortest realized AlGaN/GaN beams of in length.
Exemplary mode shapes of the first (a) and the 8th (b) out-of-plane flexural resonances of a long and wide AlGaN/GaN beam resonator under piezoelectric actuation monitored by laser–Doppler vibrometry.
Spectra of the average out-of-plane displacement of two different resonator beams with lengths of (a) and (b) , respectively. The beam width is for both samples.
Resonant frequency of the flexural vibration mode vs beam length on double-logarithmic scales. The measurement was carried out for a set of (filled symbols) and wide (open symbols) doubly clamped beams with lengths between 80 and . The lines represent power-law fits, yielding slopes slightly below for all data sets.
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