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Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array
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10.1063/1.3002297
/content/aip/journal/apl/93/17/10.1063/1.3002297
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3002297
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) FE-SEM image of CdS/Si-NPA and (b) the cross-sectional image of an individual pillar. (c) The sketch of the detailed structure and electrode configuration on the CdS/Si-NPA.

Image of FIG. 2.
FIG. 2.

characteristic of CdS/Si-NPA. The inset shows a fitted curve via the trap-limited model with and the proportional constant being 0.4.

Image of FIG. 3.
FIG. 3.

characteristic of Si-NPA/sc-Si.

Image of FIG. 4.
FIG. 4.

(a) XPS survey scan of Si-NPA and CdS/Si-NPA. The peak profiles of (b) Si for Si-NPA and CdS/Si-NPA and (c) Cd and (d) S for CdS/Si-NPA.

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/content/aip/journal/apl/93/17/10.1063/1.3002297
2008-10-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3002297
10.1063/1.3002297
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