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Metal modulation epitaxy growth for extremely high hole concentrations above in GaN
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10.1063/1.3005640
/content/aip/journal/apl/93/17/10.1063/1.3005640
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3005640
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the MME growth technique: the periodic cycling of buildup and depletion of surface-accumulated Ga and Mg dopants (a) during the transitions between Ga- and N-rich conditions and (b) under Ga-rich growth conditions.

Image of FIG. 2.
FIG. 2.

(a) SIMS profile of alternating Mg-doped/undoped GaN with different periodic (open/close) duty cyclings with constant Ga , and (b) individual hole concentrations and resistivities grown under different periodic duty cyclings.

Image of FIG. 3.
FIG. 3.

(a) Hall-effect data for Mg-doped GaN with different Ga fluxes with a duty cycle ; (b) RHEED images recorded for Mg-doped GaN with a Ga flux of ; and (c) with a Ga flux of .

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/content/aip/journal/apl/93/17/10.1063/1.3005640
2008-10-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm−3 in GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3005640
10.1063/1.3005640
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