banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Energy gap reduction in dilute nitride GaAsSbN
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Schematic diagram showing the two BAC models, which are used to calculate the energies of the conduction band, valence band, and spin-orbit split band of .

Image of FIG. 2.
FIG. 2.

Calculated band structures for (a) GaAsSb, (b) , and (c) .

Image of FIG. 3.
FIG. 3.

(a) Absorption spectrum of an as-grown GaAsSbN sample. The fitting curve, considering both the to and to transitions, is also depicted in the figure. The energy gap and spin-orbit splitting energy of the GaAsSbN sample are determined from curve fitting. (b) Energy gaps of the as-grown and annealed GaAsSbN samples with 2% and 3% N mole fraction as functions of Sb mole fraction. Solid curves are the simulation results with different N mole fractions, 0%, 2%, and 3%. (c) Ga–N vibration mode absorption spectra of a typical GaAsSbN sample before and after thermal annealing.

Image of FIG. 4.
FIG. 4.

Spin-orbit splitting energies of GaAsSbN samples as a function of Sb mole fraction. For comparison, the splitting energies of GaAsSb alloys reported by K. Alberi et al. (Ref. 14 ) are also plotted.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy gap reduction in dilute nitride GaAsSbN