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Energy gap reduction in dilute nitride GaAsSbN
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10.1063/1.3009199
/content/aip/journal/apl/93/17/10.1063/1.3009199
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009199
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram showing the two BAC models, which are used to calculate the energies of the conduction band, valence band, and spin-orbit split band of .

Image of FIG. 2.
FIG. 2.

Calculated band structures for (a) GaAsSb, (b) , and (c) .

Image of FIG. 3.
FIG. 3.

(a) Absorption spectrum of an as-grown GaAsSbN sample. The fitting curve, considering both the to and to transitions, is also depicted in the figure. The energy gap and spin-orbit splitting energy of the GaAsSbN sample are determined from curve fitting. (b) Energy gaps of the as-grown and annealed GaAsSbN samples with 2% and 3% N mole fraction as functions of Sb mole fraction. Solid curves are the simulation results with different N mole fractions, 0%, 2%, and 3%. (c) Ga–N vibration mode absorption spectra of a typical GaAsSbN sample before and after thermal annealing.

Image of FIG. 4.
FIG. 4.

Spin-orbit splitting energies of GaAsSbN samples as a function of Sb mole fraction. For comparison, the splitting energies of GaAsSb alloys reported by K. Alberi et al. (Ref. 14 ) are also plotted.

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/content/aip/journal/apl/93/17/10.1063/1.3009199
2008-10-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy gap reduction in dilute nitride GaAsSbN
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009199
10.1063/1.3009199
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