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On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states
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10.1063/1.3009283
/content/aip/journal/apl/93/17/10.1063/1.3009283
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009283

Figures

Image of FIG. 1.
FIG. 1.

Effective barrier heights of contacts as a function of their ideality factors. △ data of one diode measured at different temperatures between 80 and 320 K from Ref. 7; ◻ data of 31 different but identically fabricated diodes measured at the same temperature of 293 K from Ref. 10. The dashed and dash-dotted lines are the linear least-squares fits to the △ and ◻ data for , respectively.

Image of FIG. 2.
FIG. 2.

Flat-band barrier heights as a function of temperature and effective barrier heights as a function of the ideality factors at different temperatures between 80 and 260 K of one diode. Data from Ref. 4. The dashed line is the linear least-squares fit to the corresponding data points while the dash-dotted line represents the temperature variation in the fundamental band gap of InP.

Image of FIG. 3.
FIG. 3.

Barrier heights of laterally homogeneous InP Schottky contacts as a function of the difference of the metal and InP electronegativities. ◻ and points represent and data, respectively. The MIGS lines are drawn with (Ref. 17) and /Miedema unit (Refs. 3, 24, and 25). The dashed lines are the linear least-squares fits to the experimental data.

Tables

Generic image for table
Table I.

Barrier heights , , and of laterally homogeneous metal contacts on - and -type InP as determined from their and characteristics, respectively.

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/content/aip/journal/apl/93/17/10.1063/1.3009283
2008-10-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states
http://aip.metastore.ingenta.com/content/aip/journal/apl/93/17/10.1063/1.3009283
10.1063/1.3009283
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