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Effective barrier heights of contacts as a function of their ideality factors. △ data of one diode measured at different temperatures between 80 and 320 K from Ref. 7; ◻ data of 31 different but identically fabricated diodes measured at the same temperature of 293 K from Ref. 10. The dashed and dash-dotted lines are the linear least-squares fits to the △ and ◻ data for , respectively.
Flat-band barrier heights as a function of temperature and effective barrier heights as a function of the ideality factors at different temperatures between 80 and 260 K of one diode. Data from Ref. 4. The dashed line is the linear least-squares fit to the corresponding data points while the dash-dotted line represents the temperature variation in the fundamental band gap of InP.
Barrier heights of laterally homogeneous InP Schottky contacts as a function of the difference of the metal and InP electronegativities. ◻ and points represent and data, respectively. The MIGS lines are drawn with (Ref. 17) and /Miedema unit (Refs. 3, 24, and 25). The dashed lines are the linear least-squares fits to the experimental data.
Barrier heights , , and of laterally homogeneous metal contacts on - and -type InP as determined from their and characteristics, respectively.
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